Resonant-cavity-enhanced single photon avalanche diodes on double silicon- on-insulator substrates
نویسندگان
چکیده
This article may be used for research, teaching and private study purposes. Any substantial or systematic reproduction, redistribution , reselling , loan or sub-licensing, systematic supply or distribution in any form to anyone is expressly forbidden. The publisher does not give any warranty express or implied or make any representation that the contents will be complete or accurate or up to date. The accuracy of any instructions, formulae and drug doses should be independently verified with primary sources. The publisher shall not be liable for any loss, actions, claims, proceedings, demand or costs or damages whatsoever or howsoever caused arising directly or indirectly in connection with or arising out of the use of this material. We report the first resonant-cavity-enhanced single photon avalanche diode (RCE SPAD) fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector fabricated using a commercially available double SOI process. The RCE SPAD detectors have peak photon detection efficiencies ranging from 42% at 780 nm to 34% at 850 nm and an excellent photon timing resolution of 35 ps full width at half maximum. Despite the higher defectivity of double SOI substrates compared to standard silicon substrates, RCE SPADs with 20 mm diameter exhibit a fairly low dark count rate (DCR) of 3500 cs À1 at room temperature and a yield of 80%. A DCR less than 50 cs À1 can be attained with these detectors by reducing the temperature down to À15 C, while keeping the total afterpulsing probability below 9% with a dead-time of 80 ns. 1. Introduction There is nowadays a widespread and steadily growing interest in single photon detectors, driven by the need for ultimate sensitivity in various scientific and industrial applications such as fluorescence spectroscopy in life and material sciences, quantum cryptography and computing, time-of-flight ranging and imaging, particle sizing etc. In the last four decades, single photon counting (SPC) and time-correlated single-photon counting (TCSPC) techniques have been developed relying on photomultiplier tubes (PMTs), that is, vacuum tube detectors with high internal gain. PMTs offer wide sensitive area ($cm 2) and they also attain picosecond time resolution with micro-channel plate (MCP) models [1]. However, due to the intrinsic limits of the photocathodes they have moderate or low photon detection efficiency (PDE), particularly in the red and near-infrared spectral range. The PDE of conventional bialkali and multialkali photocathodes reaches 20–25% between 400 and 500 nm [1]. …
منابع مشابه
Resonant-Cavity-Enhanced Single Photon Avalanche Diodes
We present a resonant-cavity-enhanced Single Photon Avalanche Diode (SPAD) fabricated on a reflecting siliconon-insulator (SOI) substrate. The substrate incorporates a two period distributed Bragg reflector fabricated using a commercially available double-SOI process. The resonant-cavity-enhanced (RCE) SPAD detectors have peak photon detection efficiencies ranging from 41% at 780nm to 32% at 85...
متن کاملSilicon Substrates With Buried Distributed Bragg Reflectors for Resonant Cavity-Enhanced Optoelectronics
We report on a commercially reproducible silicon wafer with a high-reflectance buried distributed Bragg reflector (DBR). The substrate consists of a two-period DBR fabricated using a double silicon-on-insulator (SOI) process. The buried DBR provides a 90% reflecting surface. We have fabricated resonant cavity-enhanced Si photodetectors with 40% quantum efficiency at 860 nm and a full-width at h...
متن کاملCharacterization of Single-Photon Avalanche Diodes in Standard 140-nm SOI CMOS Technology
We report on the characterization of single-photon avalanche diodes (SPADs) fabricated in standard 140-nm silicon on insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. As a methodology for SPAD optimization, a test structure array, called SPAD farm, was realized with several junctions, guard-ring structures, dimensions, etc. In this paper, characterization results of the...
متن کاملNeural Imaging Using Single-Photon Avalanche Diodes
Introduction: This paper analyses the ability of single-photon avalanche diodes (SPADs) for neural imaging. The current trend in the production of SPADs moves toward the minimumdark count rate (DCR) and maximum photon detection probability (PDP). Moreover, the jitter response which is the main measurement characteristic for the timing uncertainty is progressing. Methods: The neural imaging pro...
متن کاملGermanium on double-SOI photodetectors for 1550 nm operation
We have fabricated and characterized the first resonant cavity enhanced (RCE) germanium photodetectors on double silicon-on-insulator substrates (Ge/DSOI) for operation around the 1550 nm communication wavelength. The Ge layer is grown through a novel two-step UHV/CVD process, while the underlying double-SOI substrate is formed through an ion-cut process. Absorption measurements of an undoped G...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2009